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Single Crystal Growth
Firstly, the single crystal to be grown is defined according to the experimental needs, and the growth method is clarified through literature research and searching on the ICSD website. For TMD materials, the chemical vapor phase transport method is generally used and is currently the only method supported in our lab. The next step is…
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MBE Growth
Preparation before growth Substrate annealing Degassing the substrate usually takes at least several hours. Tiancong degases HOPG for 6h using 600 C. Shujie degas SiC overnight at 650 C. One way to tell whether the substrate surface is cleaned is by the sharpness and brightness of its RHEED pattern. Start RHEED Evaporation source degassing and…
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