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MBE Growth
Preparation before growth Substrate annealing Degassing the substrate usually takes at least several hours. Tiancong degases HOPG for 6h using 600 C. Shujie degas SiC overnight at 650 C. One way to tell whether the substrate surface is cleaned is by the sharpness and brightness of its RHEED pattern. Start RHEED Evaporation source degassing and…
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